Electron-Phonon Relaxation in Bilayer Graphene on a Piezoelectric Substrate

Effect of piezoelectric scattering and chiral behaviour of charge carriers on electron-piezoelectric acoustic phonon relaxation in Bilayer Graphene sitting on a piezoelectric substrate is studied as a function of electron temperature, concentration of carriers and distance between the sample and the substrate. We obtain approximate analytical neglecting the chiral nature of carriers and then proceed to obtain unapproximated numerical results for the relaxation rate incorporating chirality which has a more functional role in bilayer graphene. It is observed that on the incorporation of full numerical computation the magnitude as well as the power exponent both is affected with the power exponent changed from T-3 to T-3.28 in the lower temperature range up to 1K and to T-6.95 dependence in the temperature range (>3K). We also find that the distance between the sample and substrate begins to affect the relaxation rate at temperatures above 10K.