Improving the surface charge density of a contact-separation-based triboelectric nanogenerator by modifying the surface morphology
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作者:
Mahmud, M. A. Parvez
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Univ Sci & Technol, Dept Nano Mechatron, Daejeon 305350, South KoreaUniv Sci & Technol, Dept Nano Mechatron, Daejeon 305350, South Korea
Mahmud, M. A. Parvez
[1
]
Lee, JaeJong
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Univ Sci & Technol, Dept Nano Mechatron, Daejeon 305350, South Korea
Korea Inst Machinery & Mat, Nanoconvergence & Mech Syst Res Div, Daejeon 305343, South KoreaUniv Sci & Technol, Dept Nano Mechatron, Daejeon 305350, South Korea
Lee, JaeJong
[1
,2
]
Kim, GeeHong
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机构:
Univ Sci & Technol, Dept Nano Mechatron, Daejeon 305350, South Korea
Korea Inst Machinery & Mat, Nanoconvergence & Mech Syst Res Div, Daejeon 305343, South KoreaUniv Sci & Technol, Dept Nano Mechatron, Daejeon 305350, South Korea
Kim, GeeHong
[1
,2
]
Lim, HyungJun
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机构:
Univ Sci & Technol, Dept Nano Mechatron, Daejeon 305350, South Korea
Korea Inst Machinery & Mat, Nanoconvergence & Mech Syst Res Div, Daejeon 305343, South KoreaUniv Sci & Technol, Dept Nano Mechatron, Daejeon 305350, South Korea
Lim, HyungJun
[1
,2
]
Choi, Kee-Bong
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Univ Sci & Technol, Dept Nano Mechatron, Daejeon 305350, South Korea
Korea Inst Machinery & Mat, Nanoconvergence & Mech Syst Res Div, Daejeon 305343, South KoreaUniv Sci & Technol, Dept Nano Mechatron, Daejeon 305350, South Korea
Choi, Kee-Bong
[1
,2
]
机构:
[1] Univ Sci & Technol, Dept Nano Mechatron, Daejeon 305350, South Korea
[2] Korea Inst Machinery & Mat, Nanoconvergence & Mech Syst Res Div, Daejeon 305343, South Korea
A triboelectric nanogenerator (TENG) based on the contact-separation mode can be used as a portable power source to harvest the triboelectrification which arises between contacting films. However, a general challenge is that the charge generation is usually limited. The performance of a TENG can be enhanced by modifying the surface morphologies of the triboelectric materials. In this study, we demonstrate morphologies with line, pillar and hexagonal cone shapes on the surfaces of PDMS and PMMA to enhance the charge production in a TENG. A contact and subsequent separation operation between the two surfaces of triboelectric materials is then carried out to generate the charge. Experiments reveal that the maximum output power, voltage and current density of a TENG with 300-nm hexagonal cone patterns on the contacting surfaces are nearly 22, three and six times greater than a TENG without any patterns, respectively. In addition, the results showed that pillar patterns with a smaller width generate higher output voltage, current and power levels compared to those with larger widths. As a result, the generation of the surface charge density in a TENG is augmented by the creation of nanopatterns on its contacting elements. This result will be applicable to the fabrication of a self-powered nanosystem with high efficiency at a low cost. (C) 2016 Elsevier B.V. All rights reserved.
机构:
Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
Univ Chinese Acad Sci, Coll Mat Sci & Opto Elect Technol, Beijing 100049, Peoples R ChinaChinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
Chen, Huamin
Xu, Yun
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机构:
Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
Univ Chinese Acad Sci, Coll Mat Sci & Opto Elect Technol, Beijing 100049, Peoples R China
Beijing Key Lab Inorgan Stretchable & Flexible In, Beijing 100083, Peoples R ChinaChinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
Xu, Yun
Zhang, Jiushuang
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机构:
Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
Univ Chinese Acad Sci, Coll Mat Sci & Opto Elect Technol, Beijing 100049, Peoples R ChinaChinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
Zhang, Jiushuang
Wu, Weitong
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机构:
Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
Univ Chinese Acad Sci, Coll Mat Sci & Opto Elect Technol, Beijing 100049, Peoples R ChinaChinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
Wu, Weitong
Song, Guofeng
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机构:
Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
Univ Chinese Acad Sci, Coll Mat Sci & Opto Elect Technol, Beijing 100049, Peoples R ChinaChinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
机构:
Chinese Univ Hong Kong, Dept Mech & Automat Engn, Shatin, Hong Kong, Peoples R ChinaChinese Univ Hong Kong, Dept Mech & Automat Engn, Shatin, Hong Kong, Peoples R China
Xu, Guoqiang
Guan, Dong
论文数: 0引用数: 0
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机构:
Chinese Univ Hong Kong, Dept Mech & Automat Engn, Shatin, Hong Kong, Peoples R ChinaChinese Univ Hong Kong, Dept Mech & Automat Engn, Shatin, Hong Kong, Peoples R China
Guan, Dong
Fu, Jingjing
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Chinese Univ Hong Kong, Dept Mech & Automat Engn, Shatin, Hong Kong, Peoples R ChinaChinese Univ Hong Kong, Dept Mech & Automat Engn, Shatin, Hong Kong, Peoples R China
Fu, Jingjing
Li, Xinyuan
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机构:
Chinese Univ Hong Kong, Dept Mech & Automat Engn, Shatin, Hong Kong, Peoples R China
Chinese Acad Sci, Beijing Inst Nanoenergy & Nanosyst, Beijing 100083, Peoples R ChinaChinese Univ Hong Kong, Dept Mech & Automat Engn, Shatin, Hong Kong, Peoples R China
Li, Xinyuan
Li, Anyin
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机构:
Univ New Hampshire, Dept Chem, Durham, NH 03824 USAChinese Univ Hong Kong, Dept Mech & Automat Engn, Shatin, Hong Kong, Peoples R China
Li, Anyin
Ding, Wenbo
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机构:
Tsinghua Univ, Tsinghua Shenzhen Int Grad Sch, Shenzhen 518055, Peoples R China
Tsinghua Univ, Tsinghua Berkeley Shenzhen Inst, Shenzhen 518055, Peoples R ChinaChinese Univ Hong Kong, Dept Mech & Automat Engn, Shatin, Hong Kong, Peoples R China
Ding, Wenbo
Zi, Yunlong
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Chinese Univ Hong Kong, Dept Mech & Automat Engn, Shatin, Hong Kong, Peoples R ChinaChinese Univ Hong Kong, Dept Mech & Automat Engn, Shatin, Hong Kong, Peoples R China
机构:
Nagoya Univ, Inst Mat & Syst Sustainabil, Nagoya, Aichi 4648601, JapanNagoya Univ, Inst Mat & Syst Sustainabil, Nagoya, Aichi 4648601, Japan
Matsunaga, Masahiro
Hirotani, Jun
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机构:
Nagoya Univ, Dept Elect, Nagoya, Aichi 4648603, JapanNagoya Univ, Inst Mat & Syst Sustainabil, Nagoya, Aichi 4648601, Japan
Hirotani, Jun
Ohno, Yutaka
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Nagoya Univ, Inst Mat & Syst Sustainabil, Nagoya, Aichi 4648601, Japan
Nagoya Univ, Dept Elect, Nagoya, Aichi 4648603, JapanNagoya Univ, Inst Mat & Syst Sustainabil, Nagoya, Aichi 4648601, Japan