100 GHz push-push oscillator in 90 nm CMOS technology

被引：0

作者：

Karttaavi, Timo ^{[1
]}

Holmberg, Jan ^{[1
]}

机构：

[1] VTT Tech Res Ctr Finland, Tietotie 3, FIN-02150 Espoo, Finland

来源：

2007 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE, VOLS 1 AND 2 | 2007年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 100 GHz fixed-tuned oscillator was designed and fabricated using a 90 nm bulk CMOS process. Push-push mode was chosen to improve the power output. The oscillator exhibits -3 dBm output power at 101 GHz with 27 mW power consumption. The measured SSB phase noise is -85 dBc/Hz at 1 MHz offset. Resonators are implemented with transmission lines to avoid the need of high quality capacitors and inductors.

引用

页码：249 / +

页数：2

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