Measurements of D-E hysteresis loop and ferroelectric activity in piezoelectric Li-doped ZnO

被引：0

作者：

Tamaki, N ^{[1
]}

Onodera, A ^{[1
]}

Sawada, T ^{[1
]}

Yamashita, H ^{[1
]}

机构：

[1] HOKKAI GAKUEN UNIV, FAC ENGN, DEPT ELECT & INFORMAT ENGN, SAPPORO, HOKKAIDO 064, JAPAN

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 1996年 / 29卷

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Ferroelectric activity in Li-doped n-type piezoelectric II-VI semiconductor ZnO was studied. We could successfully observe a ferroelectric D-E hysteresis loop in Zn1-xLixO ceramics for the first time. The spontaneous polarization of the sample (x = 0.1) is about 0.14 mu C/cm(2) at room temperature. The replacement of host Zn ions by small substitutional Li ions induces ferroelectricity in the wurtzite-type ZnO piezoelectric semiconductor. The behavior of dielectric anomaly and spontaneous polarization is very similar to that in a new ferroelectric Cd1-xZnxTe found recently.

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页码：S668 / S671

页数：4

共 39 条

[1] Dielectric activity and ferroelectricity in piezoelectric semiconductor Li-doped ZnO
Hokkaido Univ, Sapporo, Japan
Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap, 9 B (5160-5162):
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Onodera, A
Tamaki, N
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Sawada, T
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JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1996, 35 (9B): : 5160 - 5162
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