Sub-1100 nm lasing from post-growth intermixed InAs/GaAs quantum-dot lasers

被引：3
|
作者：
Alhashim, H. H. [1 ]
Khan, M. Z. M. [1 ]
Majid, M. A. [1 ]
Ng, T. K. [1 ]
Ooi, B. S. [1 ]
机构：
[1] King Abdullah Univ Sci & Technol, Comp Elect & Math Sci & Engn CEMSE Div, Photon Lab, Thuwal 239556900, Saudi Arabia
来源：
ELECTRONICS LETTERS | 2015年 / 51卷 / 18期
关键词：
indium compounds; gallium arsenide; III-V semiconductors; quantum dot lasers; vacancies (crystal); laser tuning; post growth intermixed quantum-dot lasers; impurity free vacancy disordering; high internal quantum effi- ciency; device characteristics; wavelength tuned lasers; high power; high gain; wavelength 1070 nm to 1190 nm; InAs-GaAs; MU-M;
D O I：
10.1049/el.2015.1803
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Impurity free vacancy disordering induced highly intermixed InAs/GaAs quantum-dot lasers are reported with high internal quantum efficiency (>89%). The lasers are shown to retain the device characteristics after intermixing and emitting in the important wavelength of approximate to 1070-1190 nm. The non-coated facet Fabry-Perot post-growth wavelength tuned lasers exhibits high-power (>1.4W) and high-gain (approximate to 50 cm(-1)), suitable for applications in frequency doubled green-yellow-orange laser realisation, gas sensing, metrology etc.
引用
收藏
页码：1444 / 1445
页数：2
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