Microstructure of AlN Grown on a Nucleation Layer on a Sapphire Substrate

被引：39

作者：

Miyagawa, Reina ^{[1
]}

Yang, Shibo ^{[1
]}

Miyake, Hideto ^{[1
]}

Hiramatsu, Kazumasa ^{[1
]}

Kuwahara, Takaaki ^{[2
]}

Mitsuhara, Masatoshi ^{[2
]}

Kuwano, Noriyuki ^{[2
,3
]}

机构：

[1] Mie Univ, Dept Elect & Elect Engn, Tsu, Mie 5148507, Japan

[2] Kyushu Univ, Dept Appl Sci Elect & Mat, Fukuoka 8168580, Japan

[3] Kyushu Univ, Art Sci & Technol Ctr Cooperat Res, Fukuoka 8168580, Japan

来源：

APPLIED PHYSICS EXPRESS | 2012年 / 5卷 / 02期

基金：

日本科学技术振兴机构; 日本学术振兴会;

关键词：

VAPOR-PHASE-EPITAXY; POLARITY;

D O I：

10.1143/APEX.5.025501

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The growth conditions and interface microstructure of AlN on sapphire grown using a nucleation layer (NL) have been studied. The AlN layer with NL-AlN grown at 1100 degrees C exhibits a smooth surface morphology. The epilayer has a small amount of tilting but the twisting is large. For the AlN layer with NL-AlN grown at 1250 degrees C, the twisting is reduced, but the surface is rough owing to the mixing of crystallographic polarity. The origins of AlN inversion domains are discussed by considering the microstructures observed by transmission electron microscopy (TEM), with the ultimate aim of growing a high-quality AlN layer. (C) 2012 The Japan Society of Applied Physics

引用

页数：3

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