Plasmon Excitation and Plasmonic Detection of Terahertz Radiation in the Grating-Gate Field-Effect-Transistor Structures

被引:67
|
作者
Popov, Viacheslav V. [1 ,2 ]
机构
[1] RAS, Kotelnikov Inst Radio Engn & Elect, Saratov Branch, Saratov 410019, Russia
[2] Saratov NG Chernyshevskii State Univ, Saratov 410012, Russia
基金
俄罗斯基础研究基金会;
关键词
Two-dimensional electron gas; Plasmons; Terahertz radiation; Detection; Field-effect transistor; Gratings; MODES;
D O I
10.1007/s10762-011-9813-6
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Physics of plasma oscillations and basic principles of plasmonic detection of terahertz radiation in the grating-gate transistor structures with two-dimensional electron channels are considered. It is shown that the grating-gate-transistor plasmonic detectors can be efficiently coupled to terahertz radiation. Plasmonic detection response considerably increases if the electron density in the grating-gate transistor structure is spatially modulated.
引用
收藏
页码:1178 / 1191
页数:14
相关论文
共 50 条
  • [41] Ultrahigh Sensitive Plasmonic Terahertz Detection Using Asymmetric Dual-Grating Gate HEMT Structures
    Watanabe, Takayuki
    Tombet, Stephane Boubanba
    Tanimoto, Yudai
    Fukushima, Tetsuya
    Otsuji, Taiichi
    Fateev, Denis
    Popov, Viacheslav
    Coquillat, Dominique
    Knap, Wojciech
    Meziani, Yahya
    Wang, Yuye
    Minamide, Hiroaki
    Ito, Hiromasa
    [J]. 2012 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2012,
  • [42] Polymer Material as a Gate Dielectric for Graphene Field-Effect-Transistor Applications
    Jung, Myung-Ho
    Handa, Hiroyuki
    Takahashi, Ryota
    Fukidome, Hirokazu
    Suemitsu, Tetsuya
    Otsuji, Taiichi
    Suemitsu, Maki
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (07)
  • [43] Enhanced plasmonic resonant excitation in a grating gated field-effect transistor with supplemental gates
    Guo, Nan
    Hu, Wei-Da
    Chen, Xiao-Shuang
    Wang, Lin
    Lu, Wei
    [J]. OPTICS EXPRESS, 2013, 21 (02): : 1606 - 1614
  • [44] Polymer material as a gate dielectric for graphene field-effect-transistor applications
    Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
    不详
    [J]. Jpn. J. Appl. Phys., 7 PART 1
  • [45] Extended gate field-effect-transistor for sensing cortisol stress hormone
    Shokoofeh Sheibani
    Luca Capua
    Sadegh Kamaei
    Sayedeh Shirin Afyouni Akbari
    Junrui Zhang
    Hoel Guerin
    Adrian M. Ionescu
    [J]. Communications Materials, 2
  • [46] High-responsivity terahertz detection by on-chip InGaAs/GaAs field-effect-transistor array
    Popov, V. V.
    Ermolaev, D. M.
    Maremyanin, K. V.
    Maleev, N. A.
    Zemlyakov, V. E.
    Gavrilenko, V. I.
    Shapoval, S. Yu.
    [J]. APPLIED PHYSICS LETTERS, 2011, 98 (15)
  • [47] Graphene-Based Periodic Gate Field Effect Transistor Structures for Terahertz Applications
    Karabiyik, Mustafa
    Al-Amin, Chowdhury
    Pala, Nezih
    [J]. NANOSCIENCE AND NANOTECHNOLOGY LETTERS, 2013, 5 (07) : 754 - 757
  • [48] Bias voltage dependency of plasmonic instability and terahertz radiation in a dual-grating-gate high-electron-mobility transistor
    Hosotani, Tomotaka
    Satou, Akira
    Otsuji, Taiichi
    [J]. 2021 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2021,
  • [49] Multiband and broadband active controllable terahertz absorption in dual-side grating-gate graphene field-effect transistors
    Yu, Anqi
    Guo, Xuguang
    Balakin, Alexei, V
    Shkurinov, Alexander P.
    Zhu, YiMing
    [J]. NANOTECHNOLOGY, 2020, 31 (28)
  • [50] QUASI-ONE-DIMENSIONAL IN-PLANE-GATE FIELD-EFFECT-TRANSISTOR
    MEINERS, U
    BRUGGER, H
    MAILE, BE
    WOLK, C
    KOCH, F
    [J]. SOLID-STATE ELECTRONICS, 1994, 37 (4-6) : 1001 - 1004