Electronic structure of WSe2: A combined photoemission and inverse photoemission study

被引：76
|
作者：
Traving, M
Boehme, M
Kipp, L
Skibowski, M
Starrost, F
Krasovskii, EE
Perlov, A
Schattke, W
机构：
[1] CHRISTIAN ALBRECHTS UNIV KIEL,INST THEORET PHYS,D-24098 KIEL,GERMANY
[2] UKRAINIAN ACAD SCI,INST PHYS MET,UA-252180 KIEV 142,UKRAINE
来源：
PHYSICAL REVIEW B | 1997年 / 55卷 / 16期
关键词：
D O I：
10.1103/PhysRevB.55.10392
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report on a complete determination of the experimental and theoretical valence- and conduction-band structure of WSe2. The results of combined angle-resolved photoemission and inverse photoemission are discussed in the context of fully relativistic linear-muffin-tin-orbital and extended linear-augmented-planewave calculations. We measure an indirect band gap of 1.2 eV, and find the valence-band maximum to be located at the center of the Brillouin zone and the conduction-band minimum at 0.55 Gamma K.
引用
收藏
页码：10392 / 10399
页数：8
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