Transistors performance in the sub-1 nm technology node based on one-dimensional nanomaterials

被引：0

作者：

Fang, Jingtian ^{[1
]}

Vandenberghe, William G. ^{[1
]}

Fischetti, Massimo V. ^{[1
]}

机构：

[1] Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75083 USA

来源：

2015 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD) | 2015年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An open boundary-conditions full-band quantum transport formalism with a plane-wave basis based on empirical pseudopotentials is used to self-consistently simulate transistors in the sub-1 nm technology node, with one-dimensional silicon nanowires, armchair-edge graphene nanoribbons, and zigzag-edge carbon nanotubes as the channel. The electrostatic potential energy and charge density distribution are shown. Current-voltage characteristics of these devices are obtained.

引用

页码：84 / 87

页数：4

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