Transistors performance in the sub-1 nm technology node based on one-dimensional nanomaterials

被引：0
|
作者：
Fang, Jingtian [1 ]
Vandenberghe, William G. [1 ]
Fischetti, Massimo V. [1 ]
机构：
[1] Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75083 USA
来源：
2015 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD) | 2015年
关键词：
D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An open boundary-conditions full-band quantum transport formalism with a plane-wave basis based on empirical pseudopotentials is used to self-consistently simulate transistors in the sub-1 nm technology node, with one-dimensional silicon nanowires, armchair-edge graphene nanoribbons, and zigzag-edge carbon nanotubes as the channel. The electrostatic potential energy and charge density distribution are shown. Current-voltage characteristics of these devices are obtained.
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页码：84 / 87
页数：4
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