Terahertz gain in optically excited biased semiconductor superlattices

被引:10
|
作者
Zhang, AZ [1 ]
Wang, DW [1 ]
Dignam, MM [1 ]
机构
[1] Queens Univ, Dept Phys, Kingston, ON K7L 3N6, Canada
基金
加拿大自然科学与工程研究理事会;
关键词
D O I
10.1063/1.1922079
中图分类号
O59 [应用物理学];
学科分类号
摘要
We investigate the terahertz-driven dynamics of excitons in an undoped optically excited biased semiconductor superlattice, including exciton-LO phonon scattering. We calculate the THz gain spectrum for a 820 fs THz pulse when the superlattice is excited by a 590 fs optical pulse. The gain arises because, in contrast to the single-electron case, the excitonic Wannier-Stark ladder is asymmetric with respect to absorption and emission. We find that gain coefficients greater than 100 cm(-1) can be achieved at excitation densities for which domain formation should not occur. (c) 2005 American Institute of Physics.
引用
收藏
页码:1 / 3
页数:3
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