Nanovoid formation through the annealing of amorphous Al2O3 and WO3 films

被引：17

作者：

Nakamura, R. ^{[1
]}

Shudo, T. ^{[1
]}

Hirata, A. ^{[2
]}

Ishimaru, M. ^{[1
]}

Nakajima, H. ^{[1
]}

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan

[2] Tohoku Univ, World Premier Int Res Ctr, Adv Inst Mat Res, Sendai, Miyagi 9808577, Japan

来源：

SCRIPTA MATERIALIA | 2011年 / 64卷 / 02期

关键词：

Nanoporous; Oxides; Amorphous; Crystallization; TEM; VOIDS; OXIDE; SILICON; GROWTH; GE;

D O I：

10.1016/j.scriptamat.2010.09.043

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A high density of nanovoids between 2 and 13 nm in size was produced during the crystallization process when amorphous Al2O3 and WO3, which are 20-30% lower in density than their crystalline phases, were annealed. By contrast, no formation or growth of nanovoids was observed during the crystallization of amorphous TiO2, which has a density 2% lower than its crystalline phase. These results suggest that large differences in density between amorphous and crystalline oxides can be utilized to produce nanoporous structures. (C) 2010 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：197 / 200

页数：4

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