Real state characterization by resonant enhancement of Raman scattering on CuGaSe2

被引：0
|
作者：
Wakita, K [1 ]
Miyazaki, T [1 ]
Takata, S [1 ]
Yamamoto, N [1 ]
机构：
[1] Univ Osaka Prefecture, Coll Engn, Dept Phys & Elect, Sakai, Osaka 5998531, Japan
来源：
TERNARY AND MULTINARY COMPOUNDS | 1998年 / 152卷
关键词：
D O I：
暂无
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Real electronic states within the bandgap have been investigated for two different CuGaSe2 crystals by enhancement in resonant Raman scattering (RRS). On one crystal, a broad peak centered at 1.58 eV by photoluminescence (PL) measurement is also observed at 1.58-1.59 eV by RRS. On the other crystal, however, three peaks located at 1.64, 1.67 and 1.70 eV are found by RRS measurement, whereas only one peak at 1.62 eV exists in PL spectra. It is found that real electronic states can be examined in more detail by RRS measurement than by usual PL measurement.
引用
收藏
页码：495 / 498
页数：4
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