Structural, Electrical and Optical Properties of Gallium Doped Zinc Oxide Thin Films Prepared by Electron Beam Evaporation Technique

被引：1

作者：

Nagarani, S. ^{[1
]}

Sanjeeviraja, C. ^{[1
]}

机构：

[1] Alagappa Univ, Sch Phys, Karaikkudi 630003, Tamil Nadu, India

来源：

SOLID STATE PHYSICS: PROCEEDINGS OF THE 55TH DAE SOLID STATE PHYSICS SYMPOSIUM 2010, PTS A AND B | 2011年 / 1349卷

关键词：

gallium doped zinc oxide; electron beam evaporation;

D O I：

10.1063/1.3605995

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

High quality gallium doped zinc oxide (GZO) films are prepared by electron beam evaporation technique. The effect of substrate temperature on structural, electrical and optical properties was studied in detail. The prepared films are polycrystalline in nature with c-axis perpendicular to the substrate. The resistivity of the film decreases and the optical transparency increases as the substrate temperature increases from room temperature to 150 C-0. The film produce the optical band gap of 3.47 eV.

引用

页码：589 / 590

页数：2

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