Recent EUV Resists toward High Volume Manufacturing

被引：25
|
作者：
Nakagawa, Hisashi [1 ]
Naruoka, Takehiko [1 ]
Nagai, Tomoki [1 ]
机构：
[1] JSR Corp, Fine Elect Res Labs, Semicond Mat Lab, Yokaichi, Mie 5108552, Japan
来源：
JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY | 2014年 / 27卷 / 06期
关键词：
Extreme ultraviolet lithography; Next generation lithography; ACID AMPLIFIERS; NORIA; PHOTORESISTS; NM;
D O I：
10.2494/photopolymer.27.739
中图分类号：
O63 [高分子化学（高聚物）];
学科分类号：
070305 ; 080501 ; 081704 ;
摘要：
Extreme ultraviolet lithography (EUVL) has been an attractive method as next generation lithography (NGL) over 20 years, and high-volume manufacturing (HVM) is now going to be realized by great progresses in materials as well as EUV source power enhancement. In this paper, recent reported materials for EUVL are summarized ranging from conventional organic material base resists to novel inorganic material base resists.
引用
收藏
页码：739 / 746
页数：8
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