Field-enhanced trapping in deep levels by multiple phonon emission in semi-insulating GaAs

被引：11
|
作者：
Rubinger, RM [1 ]
de Oliveira, AG [1 ]
Ribeiro, GM [1 ]
Bezerra, JC [1 ]
Moreira, MVB [1 ]
Chacham, H [1 ]
机构：
[1] Univ Fed Minas Gerais, Inst Ciencias Exatas, Dept Fis, BR-30123970 Belo Horizonte, MG, Brazil
来源：
JOURNAL OF APPLIED PHYSICS | 2000年 / 88卷 / 11期
关键词：
D O I：
10.1063/1.1314899
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have carried out the time, temperature, and illumination dependencies of the current density in a semi-insulating GaAs sample grown at 300 degreesC under strong electric field. Standard ohmic behavior was observed at room temperature. A negative differential behavior as a function of the applied electric field was observed by lowering the temperature and increasing the photon flux, and this phenomenon was associated to the field-enhanced trapping effect. We have fit our data with a model for enhanced capture by a multiple-phonon emission capture process assisted by the applied electrical field. (C) 2000 American Institute of Physics. [S0021-8979(00)01822-3].
引用
收藏
页码：6541 / 6544
页数：4
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