Ultrathin n+/p junction in preamorphized silicon by phosphorus and carbon coimplantation engineering:: Influence of C location

被引：10
|
作者：
Cagnat, N.
Mathiot, D.
Laviron, C.
机构：
[1] STMicroelect, F-38926 Crolles, France
[2] Univ Strasbourg 1, CNRS, InESS, F-67037 Strasbourg, France
[3] CEA, LETI, F-38054 Grenoble, France
来源：
JOURNAL OF APPLIED PHYSICS | 2007年 / 102卷 / 10期
关键词：
D O I：
10.1063/1.2811726
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
This paper reports the influence of carbon coimplantation on the redistribution of phosphorus implanted in preamorphized Si. A strong influence of the carbon location, with respect to the P profile, is evidenced. With the help of specific simulations, a model is proposed to explain this dependence. It is shown that, in optimized conditions, it is possible to achieve P profiles suitable for the thin junctions required for future device generations. (C) 2007 American Institute of Physics.
引用
收藏
页数：3
相关论文
共 50 条
  • [41] Current conduction mechanisms in Au/a-Si:H(n+)/SiGe(n)/c-Si(p)/ Ag hetero-junction solar cells
    Krichen, Monem
    Kadri, Emna
    PHASE TRANSITIONS, 2022, 95 (01) : 92 - 104
  • [42] Microbial carbon and phosphorus metabolism regulated by C:N:P stoichiometry stimulates organic carbon accumulation in agricultural soils
    Wang, Xiangxiang
    Zhang, Hongrui
    Cao, Dan
    Wu, Cuiyan
    Wang, Xianting
    Wei, Liang
    Guo, Bin
    Wang, Shuang
    Ding, Jina
    Chen, Hao
    Chen, Jianping
    Ge, Tida
    Zhu, Zhenke
    SOIL & TILLAGE RESEARCH, 2024, 242
  • [43] Mechanisms of Current Flow in the Diode Structure with an n + -p-Junction Formed by Thermal Diffusion of Phosphorus From Porous Silicon Film
    Tregulov, V. V.
    Litvinov, V. G.
    Ermachikhin, A. V.
    RUSSIAN PHYSICS JOURNAL, 2018, 60 (09) : 1565 - 1571
  • [44] Realization of radial p-n junction silicon nanowire solar cell based on low-temperature and shallow phosphorus doping
    Dong G.
    Liu F.
    Liu J.
    Zhang H.
    Zhu M.
    Liu, F. (liufz@ucas.ac.cn), 1600, Springer Science and Business Media, LLC (08): : 1 - 17
  • [45] Investigation of a-Si (N+)/c-Si (P) hetero-junction solar cell through AFORS-HET simulation
    Wang, J. Q.
    Meng, F. Y.
    Fang, Z. D.
    Ye, Q. H.
    SURFACE AND INTERFACE ANALYSIS, 2011, 43 (09) : 1211 - 1217
  • [46] Record High Efficiency Single-Walled Carbon Nanotube/Silicon p-n Junction Solar Cells
    Jung, Yeonwoong
    Li, Xiaokai
    Rajan, Nitin K.
    Tayor, Andre D.
    Reed, Mark A.
    NANO LETTERS, 2013, 13 (01) : 95 - 99
  • [47] Binary phosphorus-carbon compounds:: The series P4C3+8n
    Claeyssens, F
    Oliva, JM
    May, PW
    Allan, NL
    INTERNATIONAL JOURNAL OF QUANTUM CHEMISTRY, 2003, 95 (4-5) : 546 - 553
  • [48] Influence of Local Mechanical Stress on Monoand Polycrystalline Silicon-Based p-n Junction Under Illumination
    Gulomov, Jasurbek
    Accouche, Oussama
    Rashidov, Bobur
    Barakeh, Zaher A. L.
    Azab, Marc
    IEEE ACCESS, 2023, 11 : 82248 - 82256
  • [49] Influence of deep level defects on photoelectrical processes in p-n junction solar cells with porous silicon antireflection coating
    Tregulov, V. V.
    Litvinov, V. G.
    Ermachikhin, A., V
    Maslov, A. D.
    13TH INTERNATIONAL CONFERENCE ON ELEKTRO (ELEKTRO 2020), 2020,
  • [50] GENERATION-RECOMBINATION NOISE AND ITS INFLUENCE ON ENERGY RESOLUTION OF DIFFUSED SILICON P-N JUNCTION RADIATION DETECTORS
    DESHPANDE, RY
    NUCLEAR INSTRUMENTS & METHODS, 1967, 46 (02): : 255 - +
12345