Ultrathin n+/p junction in preamorphized silicon by phosphorus and carbon coimplantation engineering:: Influence of C location

被引：10
|
作者：
Cagnat, N.
Mathiot, D.
Laviron, C.
机构：
[1] STMicroelect, F-38926 Crolles, France
[2] Univ Strasbourg 1, CNRS, InESS, F-67037 Strasbourg, France
[3] CEA, LETI, F-38054 Grenoble, France
来源：
JOURNAL OF APPLIED PHYSICS | 2007年 / 102卷 / 10期
关键词：
D O I：
10.1063/1.2811726
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
This paper reports the influence of carbon coimplantation on the redistribution of phosphorus implanted in preamorphized Si. A strong influence of the carbon location, with respect to the P profile, is evidenced. With the help of specific simulations, a model is proposed to explain this dependence. It is shown that, in optimized conditions, it is possible to achieve P profiles suitable for the thin junctions required for future device generations. (C) 2007 American Institute of Physics.
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页数：3
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