Air sensitive tin dioxide thin films by magnetron sputtering and thermal oxidation technique

被引:41
|
作者
Shishkin, NY [1 ]
Zharsky, IM [1 ]
Lugin, VG [1 ]
Zarapin, VG [1 ]
机构
[1] Belorussian State Univ Technol, Minsk 220630, BELARUS
来源
SENSORS AND ACTUATORS B-CHEMICAL | 1998年 / 48卷 / 1-3期
关键词
tin dioxide; thin films; oxygen sensitivity;
D O I
10.1016/S0925-4005(98)00104-X
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
By the method of magnetron sputtering of metal tin and oxidation of the layer, a thin film of non-porous stoichiometric tin dioxide was obtained. Sensitive properties of the films to air oxygen in the temperature interval of 150-300 degrees C were investigated. The phenomena of conductivity type changing versus oxygen pressure was found. (C) 1998 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:403 / 408
页数:6
相关论文
共 50 条
  • [1] Physical Properties of Tin Oxide Thin Films Deposited using Magnetron Sputtering Technique
    Lim, Huey Sia
    Nayan, Nafarizal
    Sahdan, Mohd Zainizan
    Dahlan, Samsul Haimi
    Suaidi, Mohd Kadim
    Johar, Fauzi Mohd
    Kiani, Ghaffer I.
    2013 IEEE REGIONAL SYMPOSIUM ON MICRO AND NANOELECTRONICS (RSM 2013), 2013, : 356 - 359
  • [2] Use of the magnetron-sputtering technique for the control of the properties of indium tin oxide thin films
    Bhagwat, S.
    Howson, R.P.
    Surface and Coatings Technology, 1999, 111 (2-3): : 163 - 171
  • [3] Use of the magnetron-sputtering technique for the control of the properties of indium tin oxide thin films
    Bhagwat, S
    Howson, RP
    SURFACE & COATINGS TECHNOLOGY, 1999, 111 (2-3): : 163 - 171
  • [4] Crystal Structure of Nanoscale Tin Dioxide Films Produced by Magnetron Sputtering
    Sokol, E. I.
    Pirohov, O. V.
    Klochko, N. P.
    Novikov, V. A.
    Khrypunov, G. S.
    Klepikova, K. S.
    2014 IEEE 34TH INTERNATIONAL CONFERENCE ON ELECTRONICS AND NANOTECHNOLOGY (ELNANO), 2014, : 27 - 30
  • [5] Fluorine-doped tin dioxide thin films prepared by radio-frequency magnetron sputtering
    Maruyama, T
    Akagi, H
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1996, 143 (01) : 283 - 287
  • [6] Silicon dioxide electret thin films prepared by magnetron sputtering
    Minami, T
    Toda, F
    Utsubo, T
    Miyata, T
    Ohbayashi, Y
    PRICM 4: FORTH PACIFIC RIM INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS AND PROCESSING, VOLS I AND II, 2001, : 1783 - 1785
  • [7] Preparation and Properties of TiN Thin Films by DC Reactive Magnetron Sputtering
    Shan Yu-qiao
    Gu Xun-lei
    Wang You-xin
    MULTI-FUNCTIONAL MATERIALS AND STRUCTURES II, PTS 1 AND 2, 2009, 79-82 : 2275 - 2278
  • [8] Kinetic properties of TiN thin films prepared by reactive magnetron sputtering
    Solovan, M. N.
    Brus, V. V.
    Maryanchuk, P. D.
    Kovalyuk, T. T.
    Rappich, J.
    Gluba, M.
    PHYSICS OF THE SOLID STATE, 2013, 55 (11) : 2234 - 2238
  • [9] Kinetic properties of TiN thin films prepared by reactive magnetron sputtering
    M. N. Solovan
    V. V. Brus
    P. D. Maryanchuk
    T. T. Kovalyuk
    J. Rappich
    M. Gluba
    Physics of the Solid State, 2013, 55 : 2234 - 2238
  • [10] ADHESION OF THIN TIN FILMS PREPARED BY REACTIVE DC MAGNETRON SPUTTERING
    MUSIL, J
    POULEK, V
    DUSEK, V
    CZECHOSLOVAK JOURNAL OF PHYSICS, 1984, 34 (06) : 597 - 600