In Situ Electronic Structure Study of Epitaxial Niobium Thin Films by Angle-Resolved Photoemission Spectroscopy

被引:5
|
作者
Xiang, Pai [1 ]
Liu, Ji-Shan [1 ,2 ,3 ]
Li, Ming-Ying [1 ]
Yang, Hai-Feng [1 ]
Liu, Zheng-Tai [1 ]
Fan, Cong-Cong [1 ]
Shen, Da-Wei [1 ,2 ,3 ]
Wang, Zhen [1 ,2 ,3 ]
Liu, Zhi [1 ,2 ,3 ,4 ]
机构
[1] Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China
[2] CAS Ctr Excellence Superconducting Elect, Shanghai 200050, Peoples R China
[3] CAS Shanghai Sci Res Ctr, Shanghai 201203, Peoples R China
[4] ShanghaiTech Univ, Sch Phys Sci & Technol, Div Photon Sci & Condensed Matter Phys, Shanghai 200031, Peoples R China
基金
中国国家自然科学基金; 上海市自然科学基金;
关键词
SURFACE-STATE; NB FILMS; SUPERCONDUCTIVITY; SAPPHIRE; GROWTH;
D O I
10.1088/0256-307X/34/7/077402
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
High-quality single crystalline niobium films are grown on a-plane sapphire in molecular beam epitaxy. The film is single crystalline with a (110) orientation, and both the rocking curve and the reflection high-energy electron diffraction pattern demonstrate its high-quality with an atomically smooth surface. By in situ study of its electronic structure, a rather weak electron-electron correlation effect is demonstrated experimentally in this 4d transition metal. Moreover, a kink structure is observed in the electronic structure, which may result from electron-phonon interaction and it might contribute to the superconductivity. Our results help to understand the properties of niobium deeply.
引用
收藏
页数:5
相关论文
共 50 条
  • [21] Angle-resolved photoemission spectroscopy study of adsorption process and electronic structure of silver on ZnO(1010)
    Ozawa, K
    Sato, T
    Kato, M
    Edamoto, K
    Aiura, Y
    JOURNAL OF PHYSICAL CHEMISTRY B, 2005, 109 (30): : 14619 - 14626
  • [22] Angle-resolved photoemission study of the surface electronic structure of HfC (111)
    Noda, T
    Ozawa, K
    Edamoto, K
    Otani, S
    SOLID STATE COMMUNICATIONS, 1999, 110 (01) : 35 - 38
  • [23] Angle-resolved photoemission spectroscopy with an in situ tunable magnetic field
    Huang, Jianwei
    Yue, Ziqin
    Baydin, Andrey
    Zhu, Hanyu
    Nojiri, Hiroyuki
    Kono, Junichiro
    He, Yu
    Yi, Ming
    REVIEW OF SCIENTIFIC INSTRUMENTS, 2023, 94 (09):
  • [24] In-situ sample tuning in angle-resolved photoemission spectroscopy
    Wang, ZhengGuo
    Lin, Bing
    Zhang, Yan
    He, RuiHua
    SCIENTIA SINICA-PHYSICA MECHANICA & ASTRONOMICA, 2023, 53 (06)
  • [25] Electronic structure of black SmS. II. Angle-resolved photoemission spectroscopy
    Ito, T
    Chainani, A
    Kumigashira, H
    Takahashi, T
    Sato, NK
    PHYSICAL REVIEW B, 2002, 65 (15): : 1 - 4
  • [26] Electronic structure of ferromagnetic semiconductor CrGeTe3 by angle-resolved photoemission spectroscopy
    Li, Y. F.
    Wang, W.
    Guo, W.
    Gu, C. Y.
    Sun, H. Y.
    He, L.
    Zhou, J.
    Gu, Z. B.
    Nie, Y. F.
    Pan, X. Q.
    PHYSICAL REVIEW B, 2018, 98 (12)
  • [27] Electronic band structure of AlB2 studied by angle-resolved photoemission spectroscopy
    Souma, S
    Sato, T
    Takahashi, T
    Kimura, N
    Aoki, H
    JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 2005, 144 : 545 - 547
  • [28] Electronic structure of Ga1-xMnxAs studied by angle-resolved photoemission spectroscopy
    Okabayashi, J
    Kimura, A
    Rader, O
    Mizokawa, T
    Fujimori, A
    Hayashi, T
    Tanaka, M
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2001, 10 (1-3): : 192 - 195
  • [29] Surface-driven electronic structure in LaFeAsO studied by angle-resolved photoemission spectroscopy
    Liu, Chang
    Lee, Yongbin
    Palczewski, A. D.
    Yan, J-Q.
    Kondo, Takeshi
    Harmon, B. N.
    McCallum, R. W.
    Lograsso, T. A.
    Kaminski, A.
    PHYSICAL REVIEW B, 2010, 82 (07):
  • [30] Electronic structure of Cr2AlC as observed by angle-resolved photoemission spectroscopy
    Ito, Takahiro
    Pinek, Damir
    Fujita, Taishi
    Nakatake, Masashi
    Ideta, Shin-ichiro
    Tanaka, Kiyohisa
    Ouisse, Thierry
    PHYSICAL REVIEW B, 2017, 96 (19)