Electron beam lithography and ion implantation techniques for fabrication of high-T-c Josephson junctions

被引：6
|
作者：
Barth, R
Hamidi, AH
Hadam, B
Hollkott, J
Dunkmann, D
Auge, J
Kurz, H
机构：
[1] Inst. für Halbleitertechnik II, Rheinisch-Westfalische TH Aachen, D-52074 Aachen
来源：
MICROELECTRONIC ENGINEERING | 1996年 / 30卷 / 1-4期
关键词：
D O I：
10.1016/0167-9317(95)00274-X
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Established semiconductor process technologies are demonstrated to be suitable for the fabrication of high temperature superconductor (HTS) Josephson junctions. Single YBCO bridges were modified by local oxygen ion irradiation through a narrow slit in a PMMA mask which was formed by electron beam lithography. The influence of slit dimension and irradiation dose was investigated. The critical current and normal resistance of the modified microbridges can be controled by these two parameters. Proximity coupling across the modified region is observed up to a slit width of 250 nm. When exposed to microwave irradiation the microbridges exhibited Shapiro steps. In dc SQUIDs a voltage modulation as a function of an applied magnetic flux is observed.
引用
收藏
页码：407 / 410
页数：4
相关论文
共 50 条
  • [21] Investigations on high-T-c thin film intrinsic stacked Josephson junctions
    Seidel, P
    Schmidl, F
    Pfuch, A
    Schneidewind, H
    Heinz, E
    SUPERCONDUCTOR SCIENCE & TECHNOLOGY, 1996, 9 (4A): : A9 - A13
  • [22] STACKED SERIES ARRAYS OF HIGH-T-C TRILAYER JOSEPHSON-JUNCTIONS
    ECKSTEIN, JN
    BOZOVIC, I
    VIRSHUP, GF
    ONO, RH
    BENZ, SP
    IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 1995, 5 (02) : 3284 - 3287
  • [23] Preparation and properties of two types of submicron high-T-c Josephson junctions
    Seidel, P
    Schmidl, F
    Machalett, F
    Schneidewind, H
    Pfuch, A
    Hubner, U
    OXIDE SUPERCONDUCTOR PHYSICS AND NANO-ENGINEERING II, 1996, 2697 : 479 - 486
  • [24] Supercurrent distribution and flux penetration in high-T-c edge Josephson junctions
    Lee, M
    Gausepohl, SC
    Char, K
    OXIDE SUPERCONDUCTOR PHYSICS AND NANO-ENGINEERING II, 1996, 2697 : 470 - 478
  • [25] ELECTRON-BEAM DAMAGED HIGH-T-C JUNCTIONS - STABILITY, REPRODUCIBILITY AND SCALING LAWS
    PAUZA, AJ
    MOORE, DF
    CAMPBELL, AM
    BROERS, AN
    CHAR, K
    IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 1995, 5 (02) : 3410 - 3413
  • [26] Atomic-layer fabrication of high-T-c tunnel junctions
    Bozovic, I
    Eckstein, JN
    JOURNAL OF ALLOYS AND COMPOUNDS, 1997, 251 (1-2) : 201 - 205
  • [27] Critical currents, proximity effect, and Josephson penetration depth in planar high-T-c Josephson junctions
    Tolpygo, SK
    Gurvitch, M
    IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 1997, 7 (02) : 3208 - 3212
  • [28] High-T-c SQUIDs fabricated by inhibiting ion implantation
    Ma, QY
    Hong, SH
    Miller, JR
    Sun, JZ
    Gallagher, WJ
    Laibowitz, RB
    SUPERCONDUCTOR SCIENCE & TECHNOLOGY, 1996, 9 (4A): : A92 - A95
  • [29] INTRINSIC JOSEPHSON-JUNCTIONS IN HIGH-T-C SUPERCONDUCTORS AS HIGH-FREQUENCY SOURCES
    SCHLENGA, K
    HECHTFISCHER, G
    WALKENHORST, W
    MULLER, P
    REGI, FX
    SAVARY, H
    SCHNECK, J
    VEITH, M
    BRODKORB, W
    STEINBEISS, E
    IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 1995, 5 (02) : 3272 - 3275
  • [30] The intrinsic determinants of the critical current in SIS' and SIS high-T-c Josephson junctions
    Gonnelli, RS
    Puttero, D
    Ummarino, GA
    APPLIED PHYSICS LETTERS, 1996, 68 (17) : 2433 - 2435
12345