Threshold voltage correction model for quantum short channel effects in decanano-scaled MOSFETs

The fact that the quantum mechanical (QM) effects along the channel, defined as the quantum short channel effects (QSCE), non-negligibly influence device characteristics in decanano-scaled MOSFETs is highlighted. A threshold voltage correction model for the QSCE is established using the concept of "locality" and the analytical solution to 2-D Poisson equation. This model correctly reflects the relation between the QSCE and device parameters and is convenient to be embedded into SPICE models. It is concluded that the correction to threshold voltage due to the QSCE is necessary through comparison to the experimental data of a 45nm MOSFET from TSMC [1].