Quantum corrections to the threshold voltage of short channel MOSFETs

被引:0
|
作者
Kuivalainen, P. [1 ]
机构
[1] Technical Research Cent of Finland, Finland
来源
Physica Scripta T | 1994年 / T54卷
关键词
5;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:154 / 156
相关论文
共 50 条
  • [1] QUANTUM CORRECTIONS TO THE THRESHOLD VOLTAGE OF SHORT-CHANNEL MOSFETS
    KUIVALAINEN, P
    PHYSICA SCRIPTA, 1994, 54 : 154 - 156
  • [2] EVALUATION OF THRESHOLD VOLTAGE FOR SHORT-CHANNEL MOSFETS
    NISHIDA, M
    APPLIED PHYSICS LETTERS, 1977, 31 (03) : 217 - 219
  • [3] Estimation of Threshold Voltage in SiC Short-Channel MOSFETs
    Tachiki, Keita
    Ono, Takahisa
    Kobayashi, Takuma
    Tanaka, Hajime
    Kimoto, Tsunenobu
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65 (07) : 3077 - 3080
  • [4] Threshold voltage model for short channel retrograde doped MOSFETs
    Kranti, A
    Rashmi
    Haldar, S
    Gupta, RS
    PROCEEDINGS OF THE ELEVENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOL 1 & 2, 2002, 4746 : 672 - 676
  • [6] Analysis of threshold voltage temperature coefficient for short channel MOSFETS
    Ke, Daoming, 1600, Chinese Institute of Electronics, Beijing, China (23):
  • [7] Threshold voltage correction model for quantum short channel effects in decanano-scaled MOSFETs
    Zhang, DW
    Yu, ZP
    Tian, LL
    2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS, 2004, : 946 - 949
  • [9] An analytical model for anomalous threshold voltage behavior of short channel MOSFETs
    Khanna, MK
    Maneesha
    Thomas, C
    Gupta, RS
    Haldar, S
    SOLID-STATE ELECTRONICS, 1997, 41 (09) : 1386 - 1388
  • [10] AN ANALYTIC AND ACCURATE MODEL FOR THE THRESHOLD VOLTAGE OF SHORT CHANNEL MOSFETS IN VLSI
    WU, CY
    YANG, SY
    CHEN, HH
    TSENG, FC
    SHIH, CT
    SOLID-STATE ELECTRONICS, 1984, 27 (07) : 651 - 658