Chemical and structural characterization of Cu(In,Ga)Se-2/Mo interface in Cu(In,Ga)Se-2 solar cells

被引：76
|
作者：
Wada, T
Kohara, N
Negami, T
Nishitani, M
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1996年 / 35卷 / 10A期
关键词：
CuInSe2; Cu(In; Ga)Se-2; Mo; interface; solar cell; TEM; SIMS;
D O I：
10.1143/JJAP.35.L1253
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Interfaces between the Cu(In,Ga)Se-2 (CIGS) absorber and the Mo back contact in CIGS solar cells were investigated by secondary ion mass spectroscopy (SIMS) and analytical transmission electron microscopy (TEM). The solar cell with MgF2/TO/ZnO/CdS/CIGS/Mo/glass structure exhibited an efficiency of over 15%. In the SIMS depth profile, the Se intensity had a peak at the CIGS/Mo interface. Cross-sectional TEM observation showed that there were two layers at the interface. One was a MoSe2 layer and the other was an amorphous layer. The thickness of the interface layers depends on the deposition conditions of the Mo layers.
引用
收藏
页码：L1253 / L1256
页数：4
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