Chemical and structural characterization of Cu(In,Ga)Se-2/Mo interface in Cu(In,Ga)Se-2 solar cells

被引：76
|
作者：
Wada, T
Kohara, N
Negami, T
Nishitani, M
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1996年 / 35卷 / 10A期
关键词：
CuInSe2; Cu(In; Ga)Se-2; Mo; interface; solar cell; TEM; SIMS;
D O I：
10.1143/JJAP.35.L1253
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Interfaces between the Cu(In,Ga)Se-2 (CIGS) absorber and the Mo back contact in CIGS solar cells were investigated by secondary ion mass spectroscopy (SIMS) and analytical transmission electron microscopy (TEM). The solar cell with MgF2/TO/ZnO/CdS/CIGS/Mo/glass structure exhibited an efficiency of over 15%. In the SIMS depth profile, the Se intensity had a peak at the CIGS/Mo interface. Cross-sectional TEM observation showed that there were two layers at the interface. One was a MoSe2 layer and the other was an amorphous layer. The thickness of the interface layers depends on the deposition conditions of the Mo layers.
引用
收藏
页码：L1253 / L1256
页数：4
相关论文
共 50 条
  • [1] Applications of ZnO in Cu(In,Ga)Se-2 solar cells
    Ruckh, M
    Hariskos, D
    Ruhle, U
    Schock, HW
    Menner, R
    Dimmler, B
    [J]. CONFERENCE RECORD OF THE TWENTY FIFTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1996, 1996, : 825 - 828
  • [2] Characterization of Cu(InGa)Se-2 solar cells with of high Ga content
    Shafarman, WN
    Klenk, R
    McCandless, BE
    [J]. CONFERENCE RECORD OF THE TWENTY FIFTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1996, 1996, : 763 - 768
  • [3] Chemical and structural characterization of Cu(In, Ga)Se2/Mo interface in Cu(In, Ga)Se2 solar cells
    Matsushita Electric Industry Co, Ltd, Kyoto, Japan
    [J]. Jpn J Appl Phys Part 2 Letter, 10 A (L1253-L1256):
  • [4] Photoconductivity of Cu(In,Ga)Se-2 films
    Chakraborti, R
    Maiti, B
    Chaudhuri, S
    Pal, AK
    [J]. SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1996, 43 (03) : 237 - 247
  • [5] Cu(In,Ga)Se-2 solar cells, numerical simulation and analysis
    Heriche, Hocine
    Rouabah, Zahir
    Benabbas, Sabrina
    [J]. AFRICAN JOURNAL OF SCIENCE TECHNOLOGY INNOVATION & DEVELOPMENT, 2016, 8 (04): : 327 - 330
  • [6] Microstructural characterization of high-efficiency Cu(In,Ga)Se-2 solar cells
    Wada, T
    [J]. SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1997, 49 (1-4) : 249 - 260
  • [7] Junction electroluminiscence of Cu(In,Ga)Se-2 devices
    Hernandez, JL
    Rockett, A
    [J]. CONFERENCE RECORD OF THE TWENTY FIFTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1996, 1996, : 973 - 976
  • [8] Dielectric spectroscopy of relaxation processes in Cu(In,Ga)Se-2 solar cells
    Schmitt, M
    Rau, U
    Parisi, J
    [J]. CONFERENCE RECORD OF THE TWENTY FIFTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1996, 1996, : 909 - 912
  • [9] Band-gap engineering in CdS/Cu(In,Ga)Se-2 solar cells
    Topic, M
    Smole, F
    Furlan, J
    [J]. JOURNAL OF APPLIED PHYSICS, 1996, 79 (11) : 8537 - 8540
  • [10] Impurities in chemical bath deposited CdS films for Cu(In,Ga)Se-2 solar cells and their stability
    Kylner, A
    Lindgren, J
    Stolt, L
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1996, 143 (08) : 2662 - 2669
12345