Analyses of CMP Mechanism of NiP Substrate of Computer Hard-disk with Alkali Slurry

被引：0

作者：

Tan, Baimei ^{[1
]}

Niu, Xinhuan ^{[1
]}

Bian, Na ^{[1
]}

Zhou, Huanhuan ^{[1
]}

Liu, Yuling ^{[1
]}

机构：

[1] Hebei Univ Technol, Inst Microelect, Tianjin, Peoples R China

来源：

MATERIALS AND MANUFACTURING TECHNOLOGY, PTS 1 AND 2 | 2010年 / 129-131卷

关键词：

Hard-disk Substrate; Alkali CMP Slurry; Mechnism; Removal rate; Roughness;

D O I：

10.4028/www.scientific.net/AMR.129-131.580

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, the chemical character of NiP substrate of computer disk is analyzed, the CMP kinetics processing is discussed to indicate that the chemical reaction is the slowest and the control process. By analyzing essentiality of slurry on NiP film CMP, it is indicated that the chemical component of slurry acts the important role in CM P. New type of alkali slurry for NiP substrate was prepared and its CM P mechanism is studied with alkali slurry. Strong complexation of complex agent improved selectivity of concave area and convex area to get higher removal rate. Low roughness is realized with small size and low hardness silica sol as abrasive.

引用

页码：580 / 583

页数：4

共 44 条

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