A PHEMT MMIC broad-band power amplifier for LMDS

被引：3
|
作者：
Kim, YG [1 ]
Maeng, SJ [1 ]
Lee, JH [1 ]
Park, CS [1 ]
机构：
[1] Anyang Univ, Dept Data Commun, Manan Gu, Anyang City 430714, Kyungki Do, South Korea
来源：
1998 IEEE RADIO AND WIRELESS CONFERENCE PROCEEDINGS - RAWCON 98 | 1998年
关键词：
power amplifier; MMIC; broad-band amplifier; PHEMT; LMDS; Ka-band; driver amplifier;
D O I：
10.1109/RAWCON.1998.709151
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A two-stage monolithic microwave integrated circuits (MMIC) broad-band power amplifier with AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) has been developed for the up-link and down-link applications for local multipoint distribution systems (LMDS) in the frequency range of 24 similar to 28 GHz. The amplifier has a small signal gain of 18.6 dB at 24.5 GHz and 16.7 dB at 27.1 GHz; It achieved output powers of 19.8 dBm with PAE of 19.8% at 24.5 GHz and 18.8 dBm at 27.1 GHz.
引用
收藏
页码：121 / 124
页数：4
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