First boronization in KSTAR

被引:14
|
作者
Hong, S. H. [1 ,3 ]
Lee, K. S. [1 ]
Kim, K. M. [1 ]
Kim, H. T. [1 ]
Kim, G. P. [1 ]
Sun, J. H. [2 ,3 ]
Woo, H. J. [2 ,3 ]
Park, J. M. [1 ]
Kim, W. C. [1 ]
Kim, H. K. [1 ]
Park, K. R. [1 ]
Yang, H. L. [1 ]
Na, H. K. [1 ]
Chung, K. S. [2 ,3 ]
机构
[1] Natl Fus Res Inst, Taejon 305333, South Korea
[2] Hanyang Univ, Dept Elect Engn, Seoul 133791, South Korea
[3] Hanyang Univ, Ctr Edge Plasma Sci, Seoul 133791, South Korea
关键词
Wall conditioning; Boronization; a-C/B:H thin film; Carborane; KSTAR; CARBORANE; JT-60U; WALL;
D O I
10.1016/j.fusengdes.2010.04.064
中图分类号
TL [原子能技术]; O571 [原子核物理学];
学科分类号
0827 ; 082701 ;
摘要
First boronization in KSTAR is reported. KSTAR boronization system is based on a carborane (C(2)B(10)H(12)) injection system. The design, construction, and test of the system are accomplished and it is tested by using a small vacuum vessel before it is mounted to a KSTAR port. After the boronization in KSTAR, impurity levels are significantly reduced by factor of 3 (oxygen) and by 10 (carbon). Characteristics of a-C/B:H thin films deposited by carborane vapor are investigated. Re-condensation of carborane vapor during the test phase has been reported. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码:946 / 949
页数:4
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