Nitrogen Vacancy and Magnetic Property in Cu-Doped AlN From First-Principles Calculations

被引:5
|
作者
Kang, Byung-Sub [1 ]
Lee, Jae-Kwang [1 ]
Chae, Kwang-Pyo [1 ]
Kim, Kyeong-Sub [1 ]
Zhang, Ying-De [2 ,3 ]
Yu, Seong-Cho [2 ,3 ]
Oh, Suhk-Kun [2 ,3 ]
机构
[1] Konkuk Univ, Dept Nano Sci & Mech Engn, Chungju 380701, South Korea
[2] Chungbuk Natl Univ, Dept Phys, Cheongju 361763, South Korea
[3] Chungbuk Natl Univ, Phys Program Bk21, Cheongju 361763, South Korea
关键词
Cu-doped AIN; ferromagnetism; first-principles; N defect; ROOM-TEMPERATURE; FERROMAGNETISM; GAN; APPROXIMATION; SEMICONDUCTOR;
D O I
10.1109/TMAG.2011.2172930
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The effects on the ferromagnetism of a nitrogen defect in Cu-doped AlN with a Cu concentration of 2.77-8.33% have been investigated by first-principles. For Al0.9723Cu0.0277N, a global magnetic moment of 1.46 mu(B)/cell, with a localized magnetic moment of 0.75 mu(B)/Cu is found. The formation of Cu-Cu in AlN with the N vacancy (V-N) is more energetically favorable than that without the V-N. Hence, the Cu + V-N state is produced easily. The Cu magnetic moment of Cu-Cu pair becomes very low by the weak 3d-3d spin coupling due to the spin-exchange interaction between Cu-3d and N defect states.
引用
收藏
页码:1285 / 1288
页数:4
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