Thermal conductivity of silicon nanomaterials measured using the photoacoustic technique in a piezoelectric configuration

被引:19
|
作者
Dubyk, Kateryna [1 ]
Pastushenko, Anton [2 ]
Nychyporuk, Tetyana [2 ]
Burbelo, Roman [1 ]
Isaiev, Mykola [1 ,3 ]
Lysenko, Vladimir [2 ]
机构
[1] Taras Shevchenko Natl Univ Kyiv, 64-13 Volodymyrska Str, UA-01601 Kiev, Ukraine
[2] Univ Lyon, INSA Lyon, CNRS, INL,UMR5270, F-69621 Villeurbanne, France
[3] Univ Lorraine, Fac Sci & Technol, Lab LEMTA, CNRS,UMR 7563, BP 70239, F-54506 Vandoeuvre Les Nancy, France
关键词
Photoacoustic technique; Piezoelectric recording; Silicon nanomaterial; Thermal conductivity; POROUS SILICON; NANOWIRES;
D O I
10.1016/j.jpcs.2018.12.002
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
In this study, we investigated the thermal transport in porous silicon nanostructures and silicon nanowires fabricated by electrochemical and metal-assisted chemical etching processes, respectively. In particular, the thermal conductivity values for the silicon-based nanomaterials were estimated based on photoacoustic measurements obtained from piezoelectric recordings. The amplitude-frequency and phase-frequency dependencies of the photoacoustic responses of the nanostructured silicon samples were obtained, and simulated successfully with a theoretical model. Correlations were established between the thermal conductivities and etching parameters.
引用
收藏
页码:267 / 273
页数:7
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