A Comparison of Electron, Proton and Gamma Irradiation Effects on the I-V Characteristics of 200 GHz SiGe HBTs

被引：15
|
作者：
Hegde, Vinayakprasanna N. [1 ]
Pradeep, T. M. [1 ]
Pushpa, N. [2 ]
Praveen, K. C. [3 ]
Bhushan, K. G. [4 ]
Cressler, J. D. [5 ]
Prakash, A. P. Gnana [1 ]
机构：
[1] Univ Mysore, Dept Studies Phys, Mysore 570006, Karnataka, India
[2] JSS Coll, Dept PG Studies Phys, Mysore 570025, Karnataka, India
[3] Indian Space Res Org, Lab Electroopt Syst, Bengaluru 560058, India
[4] Baba Atom Res Ctr, Tech Phys Div, Bombay 400085, Maharashtra, India
[5] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA
来源：
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 2018年 / 18卷 / 04期
关键词：
SiGe HBTs; irradiation; EB spacer oxide; STI oxide; current gain degradation; isochronal annealing; DISPLACEMENT DAMAGE; RADIATION TOLERANCE; ION; TECHNOLOGY;
D O I：
10.1109/TDMR.2018.2875064
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Total ionizing dose effects induced by 1 MeV electron and 5 MeV proton on the dc electrical characteristics of 200 GHz silicon germanium heterojunction bipolar transistors (SiGe HBTs) were investigated. These results were compared with Co-60 gamma irradiation results to understand the linear energy transfer effects on the electrical characteristics of SiGe HBTs. The different electrical parameters like forward and inverse mode Gummel characteristics, excess base current (Delta I-B), current gain (h(FE)), and output characteristics (I-C-V-CE) were systematically studied before and after irradiation. The electrical characteristics of irradiated SiGe HBTs degrade with an increase in total dose. The more degradation in device parameters was observed in case of 5 MeV proton irradiated HBTs when compared to other radiations. The irradiated devices were also subjected to isochronal annealing to analyze the recovery of electrical parameters.
引用
收藏
页码：592 / 598
页数：7
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