GaInAsP/InP membrane buried heterostructure distributed feedback laser with air-bridge structure

被引：12

作者：

Naitoh, Hideyuki ^{[1
]}

Sakamoto, Shinichi ^{[1
]}

Ohtake, Mamoru ^{[1
]}

Okumura, Tadashi ^{[1
]}

Maruyama, Takeo ^{[1
,3
]}

Nishiyama, Nobuhiko ^{[2
]}

Arai, Shigehisa ^{[1
,3
]}

机构：

[1] Tokyo Inst Technol, Quantum Nanoelect Res Ctr, Meguro Ku, Tokyo 1528552, Japan

[2] Tokyo Inst Technol, Dept Elect & Elect Engn, Meguro Ku, Tokyo 1528552, Japan

[3] Japan Sci & Technol Agcy, Kawaguchi Ctr Bldg, CREST, Kawaguchi, Saitama 3320012, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2007年 / 46卷 / 45-49期

关键词：

GaInAsP/InP; DFB laser; membrane laser; air-bridge structure; high optical confinement;

D O I：

10.1143/JJAP.46.L1158

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We fabricated a membrane buried heterostructure distributed feedback (BH-DFB) laser with an air-bridge structure by selectively etching a sacrificial layer. A continuous wave (CW) operation under optical pumping was attained from 10 up to 80 degrees C, and a minimum threshold pump power of 4.3 mW was obtained at 20 degrees C. From the pump-power dependence of the lasing wavelength. the thermal resistance of this air-bridge membrane structured was estimated to be 11 K/mW, which is approximately half that of a previously reported structure (23 K/mW) fabricated by direct wafer bonding on another InP substrate.

引用

页码：L1158 / L1160

页数：3

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