A new version of the method for analysing peak broadening caused by local tilt distribution in double-crystal X-ray diffraction measurements (vol 33, pg 1376, 2000)

被引：0

作者：

Nakashima, K ^{[1
]}

机构：

[1] NTT Corp, Photon Labs, Atsugi, Kanagawa 2430198, Japan

来源：

JOURNAL OF APPLIED CRYSTALLOGRAPHY | 2001年 / 34卷

关键词：

D O I：

10.1107/S0021889800020203

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：87 / 87

页数：1

共 8 条

[1] A new version of the method for analysing peak broadening caused by local tilt distribution in double-crystal X-ray diffraction measurements
Nakashima, K
[J]. JOURNAL OF APPLIED CRYSTALLOGRAPHY, 2000, 33 : 1376 - 1385
[2] A new method for analysing peak broadening caused by compositional fluctuation in X-ray diffraction measurements
Nakashima, K
Kawaguchi, Y
[J]. JOURNAL OF APPLIED CRYSTALLOGRAPHY, 2001, 34 : 681 - 690
[3] A novel method of analyzing peak broadening due to mosaicity for cubic crystals on (001) substrate using double-crystal X-ray diffraction measurements
Nakashima, K
Sugiura, H
[J]. JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1997, 30 : 1002 - 1007
[4] A novel analysis method for peak broadening due to thin structures in double crystal X-ray diffraction measurements
Nakashima, K.
[J]. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2001, 40 (9 A): : 5454 - 5463
[5] A novel analysis method for peak broadening due to thin structures in double crystal X-ray diffraction measurements
Nakashima, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2001, 40 (9A): : 5454 - 5463
[6] A simple method for analyzing peak broadening due to tilt and twist distributions in X-ray diffraction measurements of materials of arbitrary type
Nakashima, Kiichi
Matsuoka, Takashi
[J]. JOURNAL OF APPLIED CRYSTALLOGRAPHY, 2008, 41 : 191 - 197
[7] Determination of the critical thickness of misfit dislocation multiplication using in situ double-crystal x-ray diffraction (vol 11, pg 1051, 1996)
Mock, P
Tanner, BK
Li, CR
Keir, AM
Johnson, AD
Lacey, G
Clark, GF
Lunn, B
Hogg, JCH
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1996, 11 (09) : 1363 - 1363
[8] A new method for calculation of crystal susceptibilities for X-ray diffraction at arbitrary wavelength (vol A58, pg 370, 2002)
Feranchuk, ID
Gurskii, LI
Komarov, LI
Lugovskaya, OM
Burgäzy, F
Ulyanenkov, A
[J]. ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES, 2003, 59 : 199 - 199

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