Random Telegraph Signal Noise in Phase Change Memory Devices

被引：18
|
作者：
Fugazza, Davide [1 ]
Ielmini, Daniele [1 ]
Lavizzari, Simone [1 ]
Lacaita, Andrea L. [1 ]
机构：
[1] Politecn Milan IU NET, Dipartimento Elettron & Informaz, I-20133 Milan, Italy
来源：
2010 INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM | 2010年
关键词：
phase change memory (PCM); non-volatile memory; random telegraph noise; random resistance network (RRN); Meyer-Neldel law; CONDUCTANCE FLUCTUATIONS; 1/F NOISE;
D O I：
10.1109/IRPS.2010.5488741
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Reliability in phase-change memory (PCM) devices is mainly related to the metastable nature of the amorphous phase, affected by crystallization and structural relaxation (SR) processes. More recently, low-frequency noise has attracted interest both as a valuable investigation tool of the microscopic properties of the chalcogenide material and as a possible reliability topic for future technology nodes. Moreover the recent appearance of random telegraph-signal noise (RTN) as a result of cell downscaling supports the need of a deeper insight into these phenomena. This work presents for the first time RTN in PCM, describing both frequency and time dependences of the noise. We analyze (i) the R dependence with the aid of a distributed Poole-Frenkel (DPF) conduction model and (ii) the voltage and temperature dependences, discussing possible physical origins of RTN in phase-change memories.
引用
收藏
页码：743 / 749
页数：7
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