Analysis and Design of Class E Power Amplifier employing SiC MESFETs

被引：0
|
作者：
Xu, Zhichao [1 ]
Lv, Hongliang [1 ]
Zhang, Yuming [1 ]
Zhang, Yimen [1 ]
机构：
[1] Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices, Xian, Peoples R China
来源：
2009 IEEE INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC 2009) | 2009年
关键词：
SiC MESFET; class-E power amplifier; transmission-line; transistor parameters;
D O I：
10.1109/EDSSC.2009.5394204
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Silicon Carbide (SiC) Metal-Semiconductor Field Effect Transistors (MESFET) is a perfect choice for designing class-E power amplifiers (PA) due to its high breakdown voltage and low output capacitance. In this paper, a transmission-line Class-E PA employing SiC MESFET is designed, and transistor parameters are discussed. The proposed PA has been tested with Advanced Design System (ADS), the peak power added efficiency (PAE) of 70.5% with drain efficiency of 77.9% and power gain of 10dB are achieved at operating frequency 2.14GHz.
引用
收藏
页码：28 / +
页数：2
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