Field-induced magnetic phase transitions in a GdSi single crystal

被引:11
|
作者
Tung, LD [1 ]
Lees, MR
Balakrishnan, G
Paul, DM
Schobinger-Papamantellos, P
Tegus, O
Brommer, PE
Buschow, KHJ
机构
[1] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England
[2] ETHZ, Lab Kristallog, CH-8092 Zurich, Switzerland
[3] Univ Amsterdam, Van der Waals Zeeman Inst, NL-1018 XE Amsterdam, Netherlands
来源
PHYSICAL REVIEW B | 2005年 / 71卷 / 14期
关键词
D O I
10.1103/PhysRevB.71.144410
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report on unusual field-induced magnetic phase transitions observed in a GdSi single crystal at low temperature. The magnetization curves initially show an anisotropic character between the b axis and the ac plane. With increasing applied field, the magnetization measured along the c axis merges with that measured along the b axis through a jumplike transition at field of about 2.5 T, whereas that measured along the a axis gradually joins the other two at about 3.8 T. Above 3.8 T, the magnetization behaves isotropically with applied magnetic field and then reaches saturation through a jumplike transition at a field of about 19.5 T. We discuss the anomalous behavior of the compound in terms of interplay between the localized 4f spins and the (itinerant) conduction electrons.
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页数:4
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