Effect of Al on the microstructure, magnetic and millimeter-wave properties of high oriented barium hexaferrite thin films

被引：5

作者：

Chen, Daming ^{[1
,2
]}

Chen, Zhuo ^{[1
]}

Wang, Guijuan ^{[1
]}

Chen, Yong ^{[1
,2
]}

Li, Yuanxun ^{[3
]}

Liu, Yingli ^{[3
]}

机构：

[1] Hainan Univ, State Key Lab Marine Resource Utilizat South Chin, Haikou 570228, Hainan, Peoples R China

[2] Hainan Prov Key Lab Res Utilizat S Zr Ti Resource, Haikou 570228, Hainan, Peoples R China

[3] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2017年 / 444卷

关键词：

Barium hexaferrite; Thin films; Millimeter-wave properties; Sol-gel method; FERRITE; LINEWIDTHS;

D O I：

10.1016/j.jmmm.2017.07.090

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The microstructure, magnetic and millimeter-wave properties of high oriented barium hexaferrite (BaAlxFe12-xO19) thin films with Al doping level x from 0 to 2 are reported. The films were grown on Pt/TiO2/SiO2/Si substrate by Sol-gel method. It is found that with increasing x from 0 to 2 the hexagonal grain disappear, together with Curie temperature dropped from 449 degrees C to 332 degrees C and saturated magnetization (4 pi Ms) decreased from 3.8 kG to 1.9 kG, it is attributed to the fact that the Fe ions were substituted by non-magnetic Al ions, leading to the Fe3+-O-Fe3+ super-exchange interaction became weak. The ferromagnetic resonance (FMR) measurement showed that the FMR linewidths is as low as 113 Oe @ 58 GHz, and the FMR frequency shifted to higher frequency range when increasing Al doping level. These result offer the potential application of barium ferrite thin films in tunable millimeter wave devices such as filter, circulator and isolator. (C) 2017 Published by Elsevier B.V.

引用

页码：7 / 11

页数：5

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