Ion current analysis in pulsed RF plasma as a fundamental research of plasma-based ion implantation

被引：3
|
作者：
Tenno, N
Yukimura, K
Masamune, S
机构：
[1] Doshisha Univ, Dept Elect Engn, Kyoto 6100321, Japan
[2] Kyoto Inst Technol, Dept Elect & Informat Sci, Sakyo Ku, Kyoto 6068585, Japan
来源：
SURFACE & COATINGS TECHNOLOGY | 2001年 / 136卷 / 1-3期
关键词：
plasma-based ion implantation (PBII); ion current analysis; stray capacitance;
D O I：
10.1016/S0257-8972(00)01041-0
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Analysis of the target current in plasma-based ion implantation (PBII) has been performed using a simple equivalent circuit model. It was found that a current for charging the stray capacitance dominates the initial phase of the voltage pulse. The target Voltage decay after turning off the power supply depends on the sheath impedance and the stray capacitance as well. It is therefore very important to reduce the stray capacitance in order to suppress unfavorable effects, such as sputtering with low energy ions. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：127 / 131
页数：5
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