Ultrahigh-temperature rapid thermal oxidation of 4H-SiC(0001) surfaces and oxidation temperature dependence of SiO2/SiC interface properties

被引：44

作者：

Hosoi, Takuji ^{[1
]}

Nagai, Daisuke ^{[1
]}

Sometani, Mitsuru ^{[1
]}

Katsu, Yoshihito ^{[1
]}

Takeda, Hironori ^{[1
]}

Shimura, Takayoshi ^{[1
]}

Takei, Manabu ^{[2
]}

Watanabe, Heiji ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Engn, 2-1 Yamadaoka, Suita, Osaka 5650871, Japan

[2] Fuji Elect Co Ltd, 1 Fujimachi, Hino, Tokyo 1918502, Japan

来源：

APPLIED PHYSICS LETTERS | 2016年 / 109卷 / 18期

关键词：

SILICON-CARBIDE; MOS CAPACITORS;

D O I：

10.1063/1.4967002

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ultrahigh-temperature rapid thermal oxidation of 4H-SiC(0001) surfaces in dry O-2 ambient was performed at temperatures up to 1700 degrees C. The temperature dependence of the reaction-limited linear growth rate of a thermal SiO2 layer revealed that not active but passive oxidation is dominant even at 1600 degrees C, and its activation energy was estimated to be 2.9 eV. We also found that high-temperature oxidation is beneficial in improving SiO2/SiC interface properties, but unintentional oxidation during the cooling down process causes interface degradation. By effectively suppressing the oxide growth during the cooling process, the lowest interface state density was obtained for the oxide formed at 1450 degrees C. Published by AIP Publishing.

引用

页数：5

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