On quantum effects and low frequency noise spectroscopy in Si Gate-All-Around Nanowire MOSFETs at cryogenic temperatures

被引：0

作者：

Boudier, D. ^{[1
]}

Cretu, B. ^{[1
]}

Simoen, E. ^{[2
]}

Veloso, A. ^{[2
]}

Collaert, N. ^{[2
]}

机构：

[1] Normandie Univ, UNICAEN, ENSICAEN, CNRS,GREYC, F-14000 Caen, France

[2] IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

来源：

2017 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS 2017) | 2017年

关键词：

Gate-All-Around; SOI MOSFET; nanowire; cryogenic temperature; low frequency noise; noise spectroscopy; FINFETS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, DC and low frequency noise have been investigated in Gate-All-Around Nanowire MOSFETs at very low temperatures. Static characteristics at 4.2 K exhibit step-like effects that can be associated to energy subbands scattering. The mobility and subthreshold swing are also investigated. Finally the low frequency noise spectroscopy (from 10 K to 70 K) leads to the identification of silicon film traps.

引用

页码：5 / 8

页数：4

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