Low-firing and temperature stable microwave dielectric ceramics: Ba2LnV3O11 (Ln=Nd, Sm)

被引:38
|
作者
Li, Chunchun [1 ,2 ]
Xiang, Huaicheng [1 ]
Xu, Minyu [1 ]
Khaliq, Jibran [3 ]
Chen, Junqi [1 ]
Fang, Liang [1 ]
机构
[1] Guilin Univ Technol, State Key Lab Breeding Base Nonferrous Met & Spec, Guangxi Univ Key Lab Nonferrous Met Oxide Elect F, Coll Mat Sci & Engn, Guilin, Peoples R China
[2] Guilin Univ Technol, Coll Informat Sci & Engn, Guilin, Peoples R China
[3] Northumbria Univ, Dept Mech & Construct Engn, Fac Engn & Environm, Newcastle Upon Tyne, Tyne & Wear, England
关键词
Ba(2)LnV(3)O(11) (Ln=Nd; Sm); chemical compatibility; LTCC; microwave dielectric properties; BOND-VALENCE; CA; SR; BA;
D O I
10.1111/jace.15251
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Low-firing and temperature stable microwave dielectric ceramics of Ba(2)LnV(3)O(11) (Ln=Nd, Sm) were prepared by solid-state reaction. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to investigate the phase purity, crystal structure, sintering behavior, and microstructure. The XRD patterns indicated that Ba(2)LnV(3)O(11) (Ln=Nd, Sm) ceramics belong to monoclinic crystal system with P2(1)/c space group in the whole sintering temperature range (800 degrees C -900 degrees C). Both ceramics could be well densified at 880 degrees C for 4hours with relative densities higher than 96%. The Ba(2)LnV(3)O(11) (Ln=Nd, Sm) samples sintered at 880 degrees C for 4hours exhibited excellent microwave dielectric properties: epsilon(r)=12.05, Qxf=23010GHz, (f)=-7.7ppm/degrees C, and epsilon(r)=12.19, Qxf=27120GHz, (f)=-16.2ppm/degrees C, respectively. Besides, Ba(2)LnV(3)O(11) (Ln=Nd, Sm) ceramics could be well co-fired with the silver electrode at 880 degrees C.
引用
收藏
页码:773 / 781
页数:9
相关论文
共 50 条
  • [31] Low Temperature Co-Firing of BaO-Nd2O3-TiO2 Microwave Ceramics
    Liu Junfeng
    Wu Shunhua
    Wang Shuang
    Chen Zhibing
    Wang Xiaoyong
    RARE METAL MATERIALS AND ENGINEERING, 2008, 37 : 355 - 358
  • [32] Low temperature firing and microwave dielectric properties of BaCaV2O7 ceramics
    Jiang, Xuewen
    Li, Chunchun
    Su, Congxue
    Wei, Zhenhai
    Fang, Liang
    CERAMICS INTERNATIONAL, 2015, 41 (03) : 5172 - 5176
  • [33] Improved microwave dielectric characteristics of low-firing CaO-SiO2 ceramics with LiF additive
    Liu, Qian
    Yang, Hongcheng
    Wang, Hua
    Wang, Yuchen
    Wu, Pei
    Li, Enzhu
    Yang, Hongyu
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2023, 34 (05)
  • [34] Improved microwave dielectric characteristics of low-firing CaO–SiO2 ceramics with LiF additive
    Qian Liu
    Hongcheng Yang
    Hua Wang
    Yuchen Wang
    Pei Wu
    Enzhu Li
    Hongyu Yang
    Journal of Materials Science: Materials in Electronics, 2023, 34
  • [35] Low-firing and microwave dielectric properties of Ba2Ti9O20 with BaO-B2O3-ZnO glass addition
    Zhou, Longfei
    Lin, Huixing
    Chen, Wei
    Luo, Lan
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (09) : 7246 - 7249
  • [36] Low-firing and microwave dielectric properties of Na2YMg2V3O12 ceramic
    Xiang, Huaicheng
    Fang, Liang
    Jiang, Xuewen
    Li, Chunchun
    CERAMICS INTERNATIONAL, 2016, 42 (02) : 3701 - 3705
  • [37] Effects of composition on low temperature sinterable Ba-Nd-Sm-Ti-O microwave dielectric materials
    Cheng, CC
    Hsieh, TE
    Lin, IN
    JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2004, 24 (06) : 1787 - 1790
  • [38] MICROWAVE DIELECTRIC-PROPERTIES OF (BA,SR)O-SM2O3-TIO2 CERAMICS
    NISHIGAKI, S
    KATO, H
    YANO, S
    KAMIMURA, R
    AMERICAN CERAMIC SOCIETY BULLETIN, 1987, 66 (09): : 1405 - 1410
  • [39] Novel Series of Low-Firing Microwave Dielectric Ceramics: (1-x)Li3Bi2P3O12-xTiO2
    Liu, Xiaobin
    Zhou, Huanfu
    Liang, Fang
    Chen, Xiuli
    Wang, Wei
    Wang, Cheng
    He, Fen
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2012, 95 (11) : 3357 - 3359
  • [40] Low-firing and microwave dielectric properties of Ba2Ti 9O20 with BaO-B2O3-ZnO glass addition
    Zhou, Longfei
    Lin, Huixing
    Chen, Wei
    Luo, Lan
    Japanese Journal of Applied Physics, 2008, 47 (9 PART 1): : 7246 - 7249