Eddy Current Imaging for Electrical Characterization of Silicon Solar Cells and TCO layers

被引：4

作者：

Hwang, Byungguk

Hillmann, Susanne

Schulze, Martin

Klein, Marcus

Heuer, Henning

机构：

来源：

SMART MATERIALS AND NONDESTRUCTIVE EVALUATION FOR ENERGY SYSTEMS 2015 | 2015年 / 9439卷

关键词：

Eddy Current imaging; standard penetration depth; sheet resistivity; PV metrology; solar cell; thin-film characterization;

D O I：

10.1117/12.2085302

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Eddy Current Testing has been mainly used to determine defects of conductive materials and wall thicknesses in heavy industries such as construction or aerospace. Recently, high frequency Eddy Current imaging technology was developed. This enables the acquirement of information of different depth level in conductive thin-film structures by realizing proper standard penetration depth. In this paper, we summarize the state of the art applications focusing on PV industry and extend the analysis implementing achievements by applying spatially resolved Eddy Current Testing. The specific state of frequency and complex phase angle rotation demonstrates diverse defects from front to back side of silicon solar cells and characterizes homogeneity of sheet resistance in Transparent Conductive Oxide (TCO) layers. In order to verify technical feasibility, measurement results from the Multi Parameter Eddy Current Scanner, MPECS are compared to the results from Electroluminescence.

引用

页数：9

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