Evaluation of heterojunction MOSFETs using UHVCVD deposited tensile-strained Si1-yCy alloy layers

被引：5

作者：

Quinones, E ^{[1
]}

Onsongo, D ^{[1
]}

Shi, Z ^{[1
]}

Banerjee, SK ^{[1
]}

机构：

[1] Univ Texas, Microelect Res Ctr, Austin, TX 78758 USA

来源：

SOLID-STATE ELECTRONICS | 2004年 / 48卷 / 03期

关键词：

Si1-yCy; heterojunction MOSFET;

D O I：

10.1016/j.sse.2003.09.003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Si1-yCy alloy layers deposited on (1 0 0) Si forma tensile-strained layer, similar to strained-Si on a relaxed SiGe buffer. We present the results of fabrication of heterojunction metal oxide semiconductor field effect transistor (MOSFET) devices using Si1-yCy alloy layers, deposited by UHVCVD. By developing a low temperature process flow (<750 degreesC), processing concerns for these types of films are alleviated. We present the results of Si1-yCy/Si heterojunction NMOSFET and PMOSFET devices. For small amounts of C (similar to0.5%), we found significant enhancement for PMOSFET devices; however, NMOSFET devices showed significant degradation. We show that with increasing fields and C concentrations, device performance may be hampered by alloy scattering in spite of the favorable bandstructure. (C) 2003 Elsevier Ltd. All rights reserved.

引用

页码：379 / 387

页数：9

共 37 条

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