Microstress in the matrix of a melt-infiltrated SiC/SiC ceramic matrix composite

被引：26

作者：

Wing, Bradley L. ^{[1
]}

Halloran, John W. ^{[1
]}

机构：

[1] Univ Michigan, Mat Sci & Engn, Ann Arbor, MI 48109 USA

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 2017年 / 100卷 / 11期

关键词：

composites; Raman spectroscopy; silicon; silicon carbide; RAMAN-SPECTROSCOPY; RESIDUAL-STRESS; TEMPERATURE-DEPENDENCE; SIC-FIBER; SILICON; SCATTERING; EXPANSION; CVI;

D O I：

10.1111/jace.15038

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Microstress in the SiC: Si matrix of a ceramic matrix composite (CMC) has been characterized, using Raman spectroscopy. The matrix of the composite was manufactured using liquid melt infiltration, and has about 20% unreacted free silicon. During the processing of the composite, the unreacted free silicon expands 11 vol % when transforming from liquid to solid. This crystallization expansion creates compressive microstress in the silicon phase of the matrix, which ranges from 2.4 to 3.1 GPa, and tensile microstress in the SiC of the matrix which ranges from 0.24 to 0.75 GPa. The microstress varies significantly with position, following a normal distribution.

引用

页码：5286 / 5294

页数：9

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