Controlled p- and n-type doping of Fe2O3 nanobelt field effect transistors -: art. no. 013113

被引：99
|
作者：
Fan, ZY
Wen, XG
Yang, SH
Lu, JG [1 ]
机构：
[1] Univ Calif Irvine, Dept Chem Engn & Mat Sci, Irvine, CA 92697 USA
[2] Univ Calif Irvine, Dept Elect Engn & Comp Sci, Irvine, CA 92697 USA
[3] Hong Kong Univ Sci & Technol, Dept Chem, Kowloon, Hong Kong, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 01期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1063/1.1977203
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Pure alpha-Fe2O3 nanobelts are configured as field effect transistors and electrical transport studies demonstrate their n-type behavior. In order to control the electrical properties of the fabricated transistor, the nanobelt channels are doped with zinc. Depending on the doping condition, alpha-Fe2O3 nanobelts can be modified to either p-type or n-type with enhanced conductivity and electron mobility. Such behavior change is exhibited in the variation of the current-voltage (I-V) and I-V-g characteristics. (c) 2005 American Institute of Physics.
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页数：3
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