Refractory metal carbide-based diffusion barriers for copper metallization

被引：2
|
作者：
Sun, SC [1 ]
Tsai, HY [1 ]
Wang, SJ [1 ]
机构：
[1] ProMOS Technol, Hsinchu, Taiwan
来源：
PROCEEDINGS OF THE IEEE 2001 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2001年
关键词：
D O I：
10.1109/IITC.2001.930060
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The electrical, physical, and barrier properties of PVD refractory metal carbide (TiCx, TaCx, and WCx) thin films were investigated for Cu metallization. The 60-nm thick TiCx, TaCx, and WCx exhibit a resistivity of 1200, 385, and 227 mu Omega -cm, respectively. Although XRD and sheet resistance measurements indicate that the thermal stability of TaCx is about 50 similar to 100 degreesC higher, the maximum stability temperature based on the diode leakage data is about the same among all three materials.
引用
收藏
页码：201 / 203
页数：3
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