FlashDefibrillator: A Data Recovery Technique for Retention Failures in NAND Flash Memory

被引:0
|
作者
Jeong, Jaeyong [1 ]
Song, Youngsun [1 ]
Kim, Jihong [1 ]
机构
[1] Seoul Natl Univ, Dept Comp Sci & Engn, Seoul 151, South Korea
关键词
D O I
暂无
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Although NAND flash memory is known as a nonvolatile memory device, the non-volatility of the data stored in the NAND flash memory is guaranteed only for a specified retention time. Since the NAND retention time assumes specific operation conditions, when the NAND flash memory is exposed to an abnormal environment beyond the specified operation conditions, stored data cannot be reliably retrieved due to retention failures. In this paper, we propose a novel data recovery technique, called FlashDefibrillator (FD), for recovering retention failures in recent NAND flash memory. By reversely exploiting charge-transient behavior observed in recent 20-nm node (or below) NAND flash memory, FD can identify retention-failed cells in a progressive fashion using a novel selective error-correction procedure. FD repeatedly applies the selective error-correction procedure until retention failures are fully recovered. Our measurement results with recent 20-nm node NAND chips show that FD outperforms the existing recovery technique in both the data recovery speed and the data recovery capability. FD can recover retention failures up to 23 times faster over the existing data recovery technique. Furthermore, FD can successfully recover severely retention-failed data (such as ones experienced eight times longer retention times than the retention-time specification) which were not recoverable with the existing technique.
引用
收藏
页数:6
相关论文
共 50 条
  • [21] A Discrete Detection and Decoding of MLC NAND Flash Memory With Retention Noise
    Sun, Wenhao
    Zheng, Jianping
    [J]. IEEE ACCESS, 2020, 8 : 60626 - 60636
  • [22] Comprehensive Characterization Method for Modeling Retention Transients in NAND Flash Memory
    Liu, Wen-Chien
    Chiu, Yung-Yueh
    Takeshita, Toshiaki
    Shirota, Riichiro
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2024, : 6003 - 6008
  • [23] Retention Characteristics of Commercial NAND Flash Memory After Radiation Exposure
    Oldham, Timothy R.
    Chen, Dakai
    Friendlich, Mark R.
    LaBel, Kenneth A.
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2012, 59 (06) : 3011 - 3015
  • [24] Schemes for Privacy Data Destruction in a NAND Flash Memory
    Ahn, Na-Young
    Lee, Dong Hoon
    [J]. IEEE ACCESS, 2019, 7 : 181305 - 181313
  • [25] Word line program disturbance based data retention error recovery strategy for MLC NAND Flash
    Ma, Haozhi
    Pan, Liyang
    Song, Changlai
    Gao, Zhongyi
    Wu, Dong
    Xu, Jun
    [J]. SOLID-STATE ELECTRONICS, 2015, 109 : 1 - 7
  • [26] Study of Intercell Trapped Charge for Data Retention Improvement in 3D NAND Flash Memory
    Zhang, Jinghan
    Tian, Xuan
    Yang, Sinan
    Li, Liang
    Li, Ming
    Gao, Liming
    [J]. 2020 21ST INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY (ICEPT), 2020,
  • [27] Word line interference based data recovery technique for 3D NAND Flash
    Yang, Liu
    Liu, Fei
    Cao, Huamin
    Wang, Qi
    Huo, Zongliang
    [J]. IEICE ELECTRONICS EXPRESS, 2018, 15 (19):
  • [28] A physical model for long term data retention characteristics in 3D NAND flash memory
    Saikia, Rashmi
    Mahapatra, Souvik
    [J]. SOLID-STATE ELECTRONICS, 2023, 199
  • [29] New Total-Ionizing-Dose Resistant Data Storing Technique for NAND Flash Memory
    Buddhanoy, Matchima
    Sakib, Sadman
    Surendranathan, Umeshwarnath
    Wasiolek, Maryla
    Hattar, Khalid
    Milenkovic, Aleksandar
    Ray, Biswajit
    [J]. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2022, 22 (03) : 438 - 446
  • [30] Scaling Challenges of NAND Flash Memory and Hybrid Memory System with Storage Class Memory & NAND flash memory
    Takeuchi, Ken
    [J]. 2013 IEEE CUSTOM INTEGRATED CIRCUITS CONFERENCE (CICC), 2013,