Heteroleptic Cyclopentadienyl-Amidinate Precursors for Atomic Layer Deposition (ALD) of Y, Pr, Gd, and Dy Oxide Thin Films

被引:28
|
作者
Seppala, Sanni [1 ]
Niinisto, Jaakko [1 ]
Blanquart, Timothee [1 ]
Kaipio, Mikko [1 ]
Mizohata, Kenichiro [2 ]
Raisanen, Jyrki [2 ]
Lansalot-Matras, Clement [3 ]
Noh, Wontae [3 ]
Ritala, Mikko [1 ]
Leskela, Markku [1 ]
机构
[1] Univ Helsinki, Dept Chem, Lab Inorgan Chem, Box 55, FI-00014 Helsinki, Finland
[2] Univ Helsinki, Dept Phys, POB 43, FI-00014 Helsinki, Finland
[3] AirLiquide Labs Korea, Yonsei Engn Res Pk,50 Yonsei Ro, Seoul 120749, South Korea
关键词
BETA-DIKETONATE; GATE DIELECTRICS; Y2O3; GD2O3; EPITAXY; HFO2;
D O I
10.1021/acs.chemmater.6b01869
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Thin films of rare-earth (RE) oxides (Y2O3, PrOx, Gd2O3, and Dy2O3) were deposited. by atomic layer deposition from liquid heteroleptic RE((PrCp)-Pr-i)(2)(Pr-i-amd) precursors with either water or ozone as the oxygen source. Film thickness, crystallinity, morphology, and composition were studied. Saturation was achieved with Gd2O3 when O-3 was used as the oxygen source at 225 degrees C and with Y2O3 with both oxygen sources at as high temperature as 350 degrees C. The growth rates were 0.90-1.3 angstrom/cycle for these processes. PrOx was challenging to deposit with both oxygen sources but with long, 20 s purges after the water pulses uniform films could be deposited. However, saturation was not achieved. With Dy2O3, uniform films could be deposited and the Dy((PrCp)-Pr-i)(2)(Pr-t-amd)/O-3 process was close to saturation at 300 degrees C. The different oxygen sources had an effect on the crystallinity and impurity contents of the films in all the studied processes. Whether ozone water was better choice for oxygen source depended on the metal oxide material that was deposited.
引用
收藏
页码:5440 / 5449
页数:10
相关论文
共 50 条
  • [31] Growth of manganese oxide thin films by atomic layer deposition
    Nilsen, O
    Fjellvåg, H
    Kjekshus, A
    THIN SOLID FILMS, 2003, 444 (1-2) : 44 - 51
  • [32] Atomic layer deposition and characterization of vanadium oxide thin films
    Blanquart, Timothee
    Niinisto, Jaakko
    Gavagnin, Marco
    Longo, Valentino
    Heikkila, Mikko
    Puukilainen, Esa
    Pallem, Venkateswara R.
    Dussarrat, Christian
    Ritala, Mikko
    Leskela, Markku
    RSC ADVANCES, 2013, 3 (04) : 1179 - 1185
  • [33] Growth of thin films of molybdenum oxide by atomic layer deposition
    Diskus, Madeleine
    Nilsen, Ola
    Fjellvag, Helmer
    JOURNAL OF MATERIALS CHEMISTRY, 2011, 21 (03) : 705 - 710
  • [34] Spatial Atomic Layer Deposition of Zinc Oxide Thin Films
    Illiberi, A.
    Roozeboom, F.
    Poodt, P.
    ACS APPLIED MATERIALS & INTERFACES, 2012, 4 (01) : 268 - 272
  • [35] The properties of plasma-enhanced atomic layer deposition (ALD) ZnO thin films and comparison with thermal ALD
    Kim, Doyoung
    Kang, Hyemin
    Kim, Jae-Min
    Kim, Hyungjun
    APPLIED SURFACE SCIENCE, 2011, 257 (08) : 3776 - 3779
  • [36] Activation of the dimers and tetramers of metal amidinate atomic layer deposition precursors upon adsorption on silicon oxide surfaces
    Chen, Bo
    Duan, Yichen
    Yao, Yunxi
    Ma, Qiang
    Coyle, Jason P.
    Barry, Sean T.
    Teplyakov, Andrew V.
    Zaera, Francisco
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2017, 35 (01):
  • [37] Atomic layer deposition (ALD) of bismuth titanium oxide thin films using direct liquid injection (DLI) method
    Cho, YJ
    Min, YS
    Lee, JH
    Seo, BS
    Lee, JK
    Park, YS
    Choi, JH
    INTEGRATED FERROELECTRICS, 2003, 59 : 1483 - 1489
  • [38] Thermal Chemistry of Nickel Diketonate Atomic Layer Deposition (ALD) Precursors on Tantalum and Silicon Oxide Surfaces
    Motin, Md Abdul
    Zaera, Francisco
    JOURNAL OF PHYSICAL CHEMISTRY C, 2021, 125 (40): : 22006 - 22022
  • [39] Atomic Layer Deposition of Molybdenum and Tungsten Oxide Thin Films Using Heteroleptic Imido-Amidinato Precursors: Process Development, Film Characterization, and Gas Sensing Properties
    Mattinen, Miika
    Wree, Jan-Lucas
    Stegmann, Niklas
    Ciftyurek, Engin
    El Achhab, Mhamed
    King, Peter J.
    Mizohata, Kenichiro
    Raisanen, Jyrki
    Schierbaum, Klaus D.
    Devi, Anjana
    Ritala, Mikko
    Leskela, Markku
    CHEMISTRY OF MATERIALS, 2018, 30 (23) : 8690 - 8701
  • [40] Atomic layer deposition of titanium oxide thin films using a titanium precursor with a linked amido-cyclopentadienyl ligand
    Kim, Seongyoon
    Hidayat, Romel
    Roh, Hyeonsu
    Kim, Jaemin
    Kim, Hye-Lee
    Khumaini, Khabib
    Park, Mira
    Seok, Jang-Hyeon
    Park, Jung Woo
    Lee, Won-Jun
    JOURNAL OF MATERIALS CHEMISTRY C, 2022, 10 (17) : 6696 - 6709