Tunnel magnetoresistance effect in Cr1-δTe/AlAs/Ga1-xMnxAs magnetic tunnel junctions -: art. no. 10D305

被引：20
|
作者：
Saito, H [1 ]
Yuasa, S [1 ]
Ando, K [1 ]
机构：
[1] Natl Inst Adv Ind Sci & Technol, Nanoelect Res Inst, Tsukuba, Ibaraki 3058568, Japan
来源：
JOURNAL OF APPLIED PHYSICS | 2005年 / 97卷 / 10期
关键词：
D O I：
10.1063/1.1846591
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Magnetic tunnel junctions (MTJs) consisting of ferromagnetic metal (Cr1-deltaTe) and semiconductor (Ga1-xMnxAs) electrodes with an AlAs tunnel barrier have been fabricated. A nonlinear behavior was clearly observed in the current versus bias-voltage characteristics, suggesting that the electric transport between the two ferromagnetic electrodes is tunneling. The MTJs exhibited the tunnel magnetoresistance (TMR) effect up to 14.5 % at 5 K. The TMR ratio was observed to rapidly decrease with increasing temperature and bias voltage. These experimental results imply that Cr1-deltaTe is applicable to the spintronic devices based on III-V semiconductors. (c) 2005 American Institute of Physics.
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