Synthesis of β-Ga2O3 nanowires as a broadband emitter

High-density monoclinic beta-Ga2O3 nanowires were synthesized by a vapor transport method with controlled ambient oxygen. The structures and morphology were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM) and high-resolution transmission electron microscopy (HR-TEM). X-ray diffraction and HR-TEM analysis indicate that the as-grown beta-Ga2O3 nanowires are single crystals with monoclinic structure. Intense four-band emissions covering the range from ultraviolet (UV) to visible were observed in photoluminescence (PL) spectra at room temperature. The main emission bands of deep blue (3.04 eV) to green (2.37 eV) for beta-Ga2O3 nanowires were adjusted by controlling the partial pressure of oxygen. This work demonstrates a low-cost and facile process for optoelectronics applications.